منابع مشابه
METASTABLE ANTISITE PAIR IN GaAs
Metastable arsenic-antisite{gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable connguration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of...
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Point defect species and concentrations in metastable Fe-C alloys are determined using density functional theory and a constrained free-energy functional. Carbon interstitials dominate unless iron vacancies are in significant excess, whereas excess carbon causes greatly enhanced vacancy concentration. Our predictions are amenable to experimental verification; they provide a baseline for rationa...
متن کاملMetastable Frenkel pair defect in graphite: source of Wigner energy?
The atomic processes associated with energy storage and release in irradiated graphite have long been subject to untested speculation. We examine structures and recombination routes for interstitial-vacancy (I-V) pairs in graphite. Interaction results in the formation of a new metastable defect (an intimate I-V pair) or a Stone-Wales defect. The intimate I-V pair, although 2.9 eV more stable th...
متن کاملNitrogen-impurity–native-defect complexes in ZnSe
Rights: © 1998 American Physical Society (APS). This is the accepted version of the following article: Pöykkö, S. & Puska, M. J. & Nieminen, Risto M. 1998. Nitrogen-impuritynative-defect complexes in ZnSe. Physical Review B. Volume 57, Issue 19. 12174-12180. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.57.12174, which has been published in final form at http://journals.aps.org/prb/abstra...
متن کاملPlanar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates using atmospheric pressure metalorganic chemical vapor deposition with Au as catalyst. These nanowires with uniform diameters are self-aligned in <110> direction in the plane of (100). The dependence of planar nanowire morphology and growth rate as a function of growth temperature provides insights i...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1996
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.54.7909